?2008 fairchild s emiconductor corporation fqb5n90 / FQI5N90 rev. c0 www.fairchildsemi.com fqb5n90 / FQI5N90 n-channel qfet ? m os fet 900 v, 5.4 a, 2.3 ? description this n-channel enhancement mode power mosfet is produced using fairchild semiconductor ? s proprietary planar stripe and dmos technology. this advanced mosfet technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. these devices are suitable for switched mode power supplies, active power factor correction (pfc), and electronic lamp ballasts. features ? 5.4 a, 900 v, r ds(on) = 2.3 ? (max.) @ v gs = 10 v , i d = 2.7 a ? low gate charge (typ. 31 nc) ? low crss (typ. 13 pf) ? 100% avalanc he tested absolute maximum ratings t c = 25c unless otherwise noted thermal characteristics symbol parameter fqb5n90 / FQI5N90 unit v dss drain-source voltage 900 v i d drain current - continuous (t c = 25c) 5.4 a - continuous (t c = 100c) 3.42 a i dm drain current - pulsed (note 1) 21.6 a v gss gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 660 mj i ar avalanche current (note 1) 5.4 a e ar repetitive avalanche energy (note 1) 15.8 mj dv/dt peak diode recovery dv/dt (note 3) 4.0 v/ns p d power dissipation (t a = 25c) * 3.13 w power dissipation (t c = 25c) 158 w - derate above 25c 1.27 w/c t j , t stg operating and storage temperature range -55 to +150 c t l maximum lead temperature for soldering purposes, 1/8 " from case for 5 seconds 300 c symbol parameter fqb5n90 / FQI5N90 unit r jc thermal resistance, junction-to-case , max. 0.79 c / w r ja thermal resistance, junction-to-ambient * 40 c / w r ja thermal resistance, junction-to-ambient , max. 62.5 c / w * when mounted on the minimum pad size recommended (pcb mount) ! " ! ! ! " " " ! " ! ! ! " " " s d g d 2 -pak i 2 -pak ? rohs compliant fqb5n90 / FQI5N90 n-channel qfet ? mosfet april 2013 g s d g s d
fqb5n90 / FQI5N90 n-channel qfet ? mosfet (note 4) (note 4, 5) (note 4, 5) (note 4) electrical characteristics t c = 25c unless otherwise noted notes: 1. repetitive rating : pulse width limited by maximum junction temperature 2. l = 43mh, i as = 5.4a, v dd = 50v, r g = 25 ?, starting t j = 25c 3. i sd 5.4a, di/dt 200a/ s, v dd bv dss, starting t j = 25c 4. pulse test : pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature symbol parameter test conditions min typ max unit off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 a 900 -- -- v ? bv dss / ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25c -- 1.0 -- v/c i dss zero gate voltage drain current v ds = 900 v, v gs = 0 v -- -- 10 a v ds = 720 v, t c = 125c -- -- 100 a i gssf gate-body leakage current, forward v gs = 30 v, v ds = 0 v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -30 v, v ds = 0 v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3.0 -- 5.0 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 2.7 a -- 1.8 2.3 ? g fs forward transconductance v ds = 50 v, i d = 2.7 a -- 5.6 -- s dynamic characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz -- 1200 1550 pf c oss output capacitance -- 110 145 pf c rss reverse transfer capacitance -- 13 17 pf switching characteristics t d(on) turn-on delay time v dd = 450 v, i d = 5.4 a, r g = 25 ? -- 28 65 ns t r turn-on rise time -- 65 140 ns t d(off) turn-off delay time -- 65 140 ns t f turn-off fall time -- 50 110 ns q g total gate charge v ds = 720 v, i d = 5.4 a, v gs = 10 v -- 31 40 nc q gs gate-source charge -- 7.2 -- nc q gd gate-drain charge -- 15 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 5.4 a i sm maximum pulsed drain-source diode forward current -- -- 21.6 a v sd drain-source diode forward voltage v gs = 0 v, i s = 5.4 a -- -- 1.4 v t rr reverse recovery time v gs = 0 v, i s = 5.4 a, di f / dt = 100 a/ s -- 610 -- ns q rr reverse recovery charge -- 5.26 -- c ?2008 fairchild semiconductor corporation fqb5n90 / FQI5N90 rev. c0 www.fairchildsemi.com
0.2 0.4 0.6 0.8 1.0 1.2 10 -1 10 0 10 1 150 notes : 1. v gs = 0v 2. 250 s pulse test 25 i dr , reverse drain current [a] v sd , source-drain voltage [v] 0369121518 1 2 3 4 5 v gs = 20v v gs = 10v note : t j = 25 r ds(on) [ ], drain-source on-resistance i d , drain current [a] 24681 0 10 -1 10 0 10 1 150 o c 25 o c -55 o c notes : 1. v ds = 50v 2. 250 s pulse test i d , drain current [a] v gs , gate-source voltage [v] 10 -1 10 0 10 1 10 -2 10 -1 10 0 10 1 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v bottom : 5.5 v notes : 1. 250 s pulse test 2. t c = 25 i d , drain current [a] v ds , drain-source voltage [v] 0 5 10 15 20 25 30 35 0 2 4 6 8 10 12 v ds = 450v v ds = 180v v ds = 720v note : i d = 5.4 a v gs , gate-source voltage [v] q g , total gate charge [nc] 10 -1 10 0 10 1 0 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd notes : 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] v ds , drain-source voltage [v] typical characteristics figure 5. capacitance characteristics figure 6. gate charge characteristics figure 3. on-resistance variation vs. drain current and gate voltage figure 4. body diode forward voltage variation vs. source current and temperature figure 2. transfer characteristics figure 1. on-region characteristics fqb5n90 / FQI5N90 n-channel qfet ? mosfet ?2008 fairchild semiconductor corporation fqb5n90 / FQI5N90 rev. c0 www.fairchildsemi.com
10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 n otes : 1. z jc (t) = 0.79 /w m ax. 2. d uty f a ctor, d =t 1 /t 2 3. t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), therm al response t 1 , s q ua re w ave p ulse d u ra tion [se c] 25 50 75 100 125 150 0 1 2 3 4 5 6 i d , drain current [a] t c , case temperature [ ] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 10 s dc 10 ms 1 ms 100 s operation in this area is limited by r ds(on) notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 notes : 1. v gs = 10 v 2. i d = 2.7 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 notes : 1. v gs = 0 v 2. i d = 250 a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] typical characteristics (continued) figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 7. breakdown voltage variation vs. temperature figure 8. on-resistance variation vs. temperature figure 11. transient thermal response curve t 1 p dm t 2 fqb5n90 / FQI5N90 n-channel qfet ? mosfet ?2008 fairchild semiconductor corporation fqb5n90 / FQI5N90 rev. c0 www.fairchildsemi.com
charge v gs 10v q g q gs q gd 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut charge v gs 10v q g q gs q gd 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut v gs v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs v gs v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs e as =li as 2 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time 10v dut r g l i d t p e as =li as 2 ---- 2 1 e as =li as 2 ---- 2 1 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time 10v dut r g l l i d i d t p gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms fqb5n90 / FQI5N90 n-channel qfet ? mosfet ?2008 fairchild semiconductor corporation fqb5n90 / FQI5N90 rev. c0 www.fairchildsemi.com
peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period -------------------------- fqb5n90 / FQI5N90 n-channel qfet ? mosfet ?2008 fairchild semiconductor corporation fqb5n90 / FQI5N90 rev. c0 www.fairchildsemi.com
mechanical dimensio ns d 2 pak dimensions in millimeters fqb5n90 / FQI5N90 n-channel qfet ? mosfet ?2008 fairchild semiconductor corporation fqb5n90 / FQI5N90 rev. c0 www.fairchildsemi.com
mechanical dimensions i 2 pak dimensions in millimeters fqb5n90 / FQI5N90 n-channel qfet ? mosfet ?2008 fairchild semiconductor corporation fqb5n90 / FQI5N90 rev. c0 www.fairchildsemi.com
trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. fairchild does not assume any liability arising out of th e application or use of any product or circuit described herein; neither does it convey an y license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwide terms and conditio ns, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized fo r use as critical components in life support devices or systems without the express written approval of fa irchild semiconductor corporation. as used here in: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform w hen properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms 2cool? 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visualmax? voltageplus? xs? ? ? datasheet identification product status definition advance information formative / in design datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the ri ght to make changes at any time without notice to improve design. no identification needed full production datasheet contains final specifications. fair child semiconductor reserves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specifications on a product that is discontinued by fairchild semiconductor. the datasheet is for reference information only. anti-counterfeiting policy fairchild semiconductor corporation?s anti-counterfeiting policy. fairchild?s anti-counterfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in th e industry. all manufactures of semiconductor products are expe riencing counterfeiting of their parts. customers who inadvertently purchase counterfeit parts ex perience many problems such as loss of brand reputation, substa ndard performance, failed application, and increased cost of production and manufacturing dela ys. fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. fairchild strongly encourages customers to purchase fairchild parts either directly from fa irchild or from authorized fairchild distributors who are listed by country on our web page cited above . products customers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have full traceability, meet fairchild?s quality standards for handing and storage and provide access to fairchild?s full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchild will not provide any warranty coverage or other assistance for parts bought from unau thorized sources. fairchild is committed to combat this global problem and encourage our customer s to do their part in stopping th is practice by buying direct or from authorized distributors. rev. i64 tm ? fqb5n90 / FQI5N90 n-channel qfet ? mosfet ?2008 fairchild semiconductor corporation fqb5n90 / FQI5N90 rev. c0 www.fairchildsemi.com
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